OUSERIGHA, Collins E.; BENJAMIN, Ayibapreye K. The Effect of B, Al, N, and P Impurities on the Electronic Structure of Si0.3Sn0.7Ge alloy: A First-Principles Approach. European Scientific Journal, ESJ, [S. l.], v. 18, n. 3, p. 186, 2022. DOI: 10.19044/esj.2022.v18n3p186. Disponível em: https://test.eujournal.org/index.php/esj/article/view/15099. Acesso em: 18 apr. 2025.